Growth of hBN and aBN thin films
Hexagonal boron nitride (hBN) and amorphous boron nitride (aBN) thin films were deposited through Inductively coupled plasma-chemical vapor depoisition (ICP-CVD).
The furnace was heated to the growth temperature (1,200 ~ 1,400 ℃ for hBN and 300 ~ 400 ℃ for aBN) with a carrier gas flow of H2 and Ar.
0.05 ~ 0.2 scccm of Borazine (B3H6N3), serving as the precursor for hBN and aBN, was introduced into ICP-CVD system during the growth time (30 ~ 90 min).
The furnace was rapidly cooled to room temperature after hBN (or aBN) growth.
The grown hBN(or aBN) thin films were transferred onto SiO2 substrate to measure Raman spectra and AFM images.
Figure. 1 (a) UV-vis absorption spectra of tri-layer hBN film on 2-inch sapphiure substrate. (b) Raman spectra of tri-layer hBN, aBN, and SiO2(280 nm)/Si substrate. (c) XPS spectra of aBN thin film for 1s and N 1s. (d-e) AFM image and thickness profile of (d) aBN and (e) tri-layer hBN films. (f) Ellipsometry spectrum of aBN film on Si substrate.
Characterization
UV-vis absorption spectra were measured by Cary 5000 UV-Vis-NIR spectrometer (Aligent, USA). Raman spectra were measured by alpha300R confocal raman spectrometer (WITec, Germany). X-ray photoelectron spectroscopy (XPS) spectra were measured by ESCALAB 250 Xi X-ray photoelectron spectrometer (Thermo Fisher Scientific, USA). Atomic force microscopy (AFM) images were measured by Dimension Icon (Bruker, USA). Ellipsometry spectrum was measured by M-2000 Ellipsometer (J. A. Woollam, USA).